FORMATION OF TITANIUM NITRIDE LAYERS BY THE NITRIDATION OF TITANIUM IN HIGH-PRESSURE AMMONIUM AMBIENT

被引：15

作者：

HARA, T ^{[1
]}

TANI, K ^{[1
]}

INOUE, K ^{[1
]}

NAKAMURA, S ^{[1
]}

MURAI, T ^{[1
]}

机构：

[1] M SETEK CO LTD,TAITO KU,TOKYO 110,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 16期

关键词：

D O I：

10.1063/1.104078

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nitridation of titanium layer is performed in a high-pressure (5.9 kg/cm2) ammonium (NH3) ambient. Although the nitridation of titanium surface does not occur at 700 °C in an atmospheric pressure, it does occur at 650 °C in an ammonium pressure of 5.9 kg/cm2. Nitridation temperature can be lowered by 100-150 °C with an increase in ammonium pressure from 2.0 to 5.9 kg/cm2. Thickness of titanium nitride layer increased markedly with increasing ammonium pressure. This is due to the enhancement of the chemical reaction of titanium with ammonium gas by the increase of pressure. The thickness increases with an increase of nitridation temperature. The thickness of the titanium silicide layer formed by the silicidation reaction between titanium and the silicon wafer is reduced with the increase in ammonium pressure.

引用

页码：1660 / 1662

页数：3

共 12 条

[1]

FUSHIDA A, 1988, SPR P M APPL PHYS SO

[2]

HARA T, UNPUB

[3]

IIO H, 1990, 8TH P HOS U ION BEAM, P153

[4] AMBIENT GAS EFFECTS ON THE REACTION OF TITANIUM WITH SILICON [J].