NOVEL SUBMICROMETER MOS DEVICES BY SELF-ALIGNED NITRIDATION OF SILICIDE

被引：25

作者：

KANEKO, H

KOYANAGI, M

SHIMIZU, S

KUBOTA, Y

KISHINO, S

机构：

[1] HITACHI MICRO COMP ENGN LTD,KODAIRA,TOKYO 187,JAPAN

[2] HITACHI LTD,MUSASHI WORKS,KODAIRA,TOKYO 187,JAPAN

来源：

关键词：

D O I：

10.1109/T-ED.1986.22731

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1702 / 1709

页数：8

共 17 条

[1] FORMATION OF TISI2 AND TIN DURING NITROGEN ANNEALING OF MAGNETRON SPUTTERED TI FILMS
ADAMS, ED
AHN, KY
BRODSKY, SB
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06): : 2264 - 2267
[2] AITKEN JM, 1981, DEC INT EL DEV M TEC, P50
[3] DEVELOPMENT OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS FOR VLSI APPLICATIONS
ALPERIN, ME
HOLLAWAY, TC
HAKEN, RA
GOSMEYER, CD
KARNAUGH, RV
PARMANTIE, WD
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1985, 20 (01) : 61 - 69
[4] ARSENIC OUT-DIFFUSION DURING TISI2 FORMATION
AMANO, J
MERCHANT, P
KOCH, T
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 744 - 746
[5] THE FORMATION OF SHALLOW LOW-RESISTANCE SOURCE DRAIN REGIONS FOR VLSI CMOS TECHNOLOGIES
BUTLER, AL
FOSTER, DJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 150 - 155
[6] CHEN JY, 1984, SOLID STATE TECHNOL, V27, P145
[7] EINSPRUCH NG, 1983, VLSI ELECTRONICS MIC, V6
[8] CONTACT RESISTANCE BEHAVIOR OF TITANIUM NITRIDE
ERNSBERGER, C
NICKERSON, J
MILLER, A
BANKS, D
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06): : 2303 - 2307
[9] SPECIFIC CONTACT RESISTIVITY OF TISI2 TO P+ AND N+ JUNCTIONS
HUI, J
WONG, S
MOLL, J
[J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (09) : 479 - 481
[10] TITANIUM SILICIDATION BY HALOGEN LAMP ANNEALING
OKAMOTO, T
TSUKAMOTO, K
SHIMIZU, M
MATSUKAWA, T
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5251 - 5256