SPECIFIC CONTACT RESISTIVITY OF TISI2 TO P+ AND N+ JUNCTIONS

[1] SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (07) : 541 - &

[2] CHEN D, UNPUB J VACUUM SCI T

[3] LAU CK, 1982, DEC IEDM, P714

[4] MERCHANT P, UNPUB

[5] MULLER, 1977, DEVICE ELECTRONICS I, P95

[6] MURARKA SP, 1983, SILICIDES VLSI APPLI, P14

[7] PROCTOR SJ, 1982, IEEE ELECTRON DEVICE, V3, P294

[8] INVESTIGATION OF THE AL/TISI2/SI CONTACT SYSTEM [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) : 937 - 943

[9] ELECTRON TUNNELING AND CONTACT RESISTANCE OF METAL-SILICON CONTACT BARRIERS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (02) : 239 - +

[1] SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (07) : 541 - &

[2] CHEN D, UNPUB J VACUUM SCI T

[3] LAU CK, 1982, DEC IEDM, P714

[4] MERCHANT P, UNPUB

[5] MULLER, 1977, DEVICE ELECTRONICS I, P95

[6] MURARKA SP, 1983, SILICIDES VLSI APPLI, P14

[7] PROCTOR SJ, 1982, IEEE ELECTRON DEVICE, V3, P294

[8] INVESTIGATION OF THE AL/TISI2/SI CONTACT SYSTEM [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) : 937 - 943

[9] ELECTRON TUNNELING AND CONTACT RESISTANCE OF METAL-SILICON CONTACT BARRIERS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (02) : 239 - +