TITANIUM SILICIDATION BY HALOGEN LAMP ANNEALING

[1] GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON [J]. APPLIED PHYSICS LETTERS, 1972, 20 (09) : 359 - &

[2] REFRACTORY-METAL SILICIDES - THIN-FILM PROPERTIES AND PROCESSING TECHNOLOGY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1480 - 1497

[3] IDENTIFICATION OF DOMINANT DIFFUSING SPECIES IN SILICIDE FORMATION [J]. APPLIED PHYSICS LETTERS, 1974, 25 (08) : 454 - 457

[4] Iyer S. S., 1984, VLSI Science and Technology-1984. Proceedings of the Second International Symposium on Very Large Scale Integration Science and Technology. Materials for High Speed/High Density Applications, P381

[5] SOLID-STATE REACTIONS IN TITANIUM THIN-FILMS ON SILICON [J]. THIN SOLID FILMS, 1976, 34 (01) : 135 - 138

[6] Lau C. K., 1982, International Electron Devices Meeting. Technical Digest, P714

[7] BACKSCATTERING ANALYSIS OF THE SUCCESSIVE LAYER STRUCTURES OF TITANIUM SILICIDES [J]. THIN SOLID FILMS, 1979, 64 (03) : 439 - 444

[8] ELECTRONIC TRANSPORT-PROPERTIES OF TISI2 THIN-FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (01): : 10 - 16

[9] THIN-FILM INTERACTION BETWEEN TITANIUM AND POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 342 - 349

[10] REFRACTORY SILICIDES OF TITANIUM AND TANTALUM FOR LOW-RESISTIVITY GATES AND INTERCONNECTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1409 - 1417

[1] GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON [J]. APPLIED PHYSICS LETTERS, 1972, 20 (09) : 359 - &

[2] REFRACTORY-METAL SILICIDES - THIN-FILM PROPERTIES AND PROCESSING TECHNOLOGY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1480 - 1497

[3] IDENTIFICATION OF DOMINANT DIFFUSING SPECIES IN SILICIDE FORMATION [J]. APPLIED PHYSICS LETTERS, 1974, 25 (08) : 454 - 457

[4] Iyer S. S., 1984, VLSI Science and Technology-1984. Proceedings of the Second International Symposium on Very Large Scale Integration Science and Technology. Materials for High Speed/High Density Applications, P381

[5] SOLID-STATE REACTIONS IN TITANIUM THIN-FILMS ON SILICON [J]. THIN SOLID FILMS, 1976, 34 (01) : 135 - 138

[6] Lau C. K., 1982, International Electron Devices Meeting. Technical Digest, P714

[7] BACKSCATTERING ANALYSIS OF THE SUCCESSIVE LAYER STRUCTURES OF TITANIUM SILICIDES [J]. THIN SOLID FILMS, 1979, 64 (03) : 439 - 444

[8] ELECTRONIC TRANSPORT-PROPERTIES OF TISI2 THIN-FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (01): : 10 - 16

[9] THIN-FILM INTERACTION BETWEEN TITANIUM AND POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 342 - 349

[10] REFRACTORY SILICIDES OF TITANIUM AND TANTALUM FOR LOW-RESISTIVITY GATES AND INTERCONNECTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1409 - 1417