DOPING OF CHALCOGENIDE GLASSES IN THE GE-SE AND GE-TE SYSTEMS

被引：87

作者：

NAGELS, P ^{[1
]}

ROTTI, M ^{[1
]}

VIKHROV, S ^{[1
]}

机构：

[1] RYAZAN RADIO ENGN INST,RYAZAN,USSR

来源：

JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC4期

关键词：

D O I：

10.1051/jphyscol:19814197

中图分类号：

学科分类号：

摘要：

引用

页码：907 / 910

页数：4

共 9 条

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[3] EFFECT OF CHARGED ADDITIVES ON CARRIER CONCENTRATIONS IN LONE-PAIR SEMICONDUCTORS
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[6] STATES IN GAP AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS
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[J]. PHILOSOPHICAL MAGAZINE, 1975, 32 (05) : 961 - 996
[7] INCREASE IN CONDUCTIVITY OF CHALCOGENIDE GLASSES BY ADDITION OF CERTAIN IMPURITIES
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[J]. PHILOSOPHICAL MAGAZINE, 1976, 34 (06): : 1101 - 1108
[8] ELECTRICAL TRANSPORT IN N-TYPE SEMICONDUCTING GE20BIXSE70-XTE10 GLASSES
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[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 37 (01) : 23 - 30
[9] ELECTRICAL AND OPTICAL-PROPERTIES OF N-TYPE SEMICONDUCTING CHALCOGENIDE GLASSES IN THE SYSTEM GE-BI-SE
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TANAKA, M
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) : 1048 - 1053

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