ELECTRIC-FIELD DEPENDENCE OF SURFACE DIPOLE OF SEMICONDUCTORS

[1] WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J]. PHYSICAL REVIEW, 1962, 127 (01): : 150 - &

[2] Busch G., 1963, PHYS KONDENS MATER, V1, P367

[3] GIANT TEMPERATURE DEPENDENCE OF WORK FUNCTION OF GAP [J]. PHYSICAL REVIEW LETTERS, 1969, 22 (22) : 1180 - &

[4] DINAN JH, TO BE PUBLISHED

[5] FISCHER TE, 1969, SURFACE SCI, V13, P31

[6] PHYSICAL THEORY OF SEMICONDUCTOR SURFACES [J]. PHYSICAL REVIEW, 1955, 99 (02): : 376 - 387

[7] GOBELI GW, 1965, PHYS REV, V137, pA246

[8] SURFACE STATES ON CLEAN SILICON [J]. SURFACE SCIENCE, 1964, 2 : 18 - 25

[9] SURFACE STATES ON CLEAVED SILICON [J]. PHYSICAL REVIEW LETTERS, 1961, 6 (04) : 170 - &

[10] ROWE JE, 1970, 10TH P INT C PHYS SE, P217

[1] WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J]. PHYSICAL REVIEW, 1962, 127 (01): : 150 - &

[2] Busch G., 1963, PHYS KONDENS MATER, V1, P367

[3] GIANT TEMPERATURE DEPENDENCE OF WORK FUNCTION OF GAP [J]. PHYSICAL REVIEW LETTERS, 1969, 22 (22) : 1180 - &

[4] DINAN JH, TO BE PUBLISHED

[5] FISCHER TE, 1969, SURFACE SCI, V13, P31

[6] PHYSICAL THEORY OF SEMICONDUCTOR SURFACES [J]. PHYSICAL REVIEW, 1955, 99 (02): : 376 - 387

[7] GOBELI GW, 1965, PHYS REV, V137, pA246

[8] SURFACE STATES ON CLEAN SILICON [J]. SURFACE SCIENCE, 1964, 2 : 18 - 25

[9] SURFACE STATES ON CLEAVED SILICON [J]. PHYSICAL REVIEW LETTERS, 1961, 6 (04) : 170 - &

[10] ROWE JE, 1970, 10TH P INT C PHYS SE, P217