SURFACE SEGREGATIONS DURING EPITAXIAL-GROWTH OF FE/AU MULTILAYERS ON GAAS(001)

被引：18

作者：

SANO, K

MIYAGAWA, T

机构：

[1] Research Institute for Metal Surfaces of High Performance (Rimes) Incorporated, Technical Research Division, Kawasaki Steel Corporation, Kawasaki-cho, Chiba

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 07期

关键词：

SURFACE SEGREGATION; EPITAXIAL GROWTH; FE/AU MULTILAYER; GAAS; SURFACE RECONSTRUCTION; SPUTTER ETCHING; RHEED; RHEED INTENSITY OSCILLATION; AES; ENTHALPY OF SURFACE SEGREGATION;

D O I：

10.1143/JJAP.30.1434

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The epitaxial growth process of Fe/Au multilayers on GaAs(001) substrates at temperatures of between 300 and 573 K has been studied using reflection high-energy electron diffraction and Auger electron spectroscopy. The growth mode is identified as the layer-by-layer type. Surface segregations of As, Ga, Fe or Au atoms that constitute substrates and underlayers were observed during the growth processes of these multilayers, depending on the deposition condition. These surface segregations can be removed by sputter etching for a short period, and resegregation is not observed afterwards. Differences in the mechanisms of these and conventional surface segregations are discussed.

引用

页码：1434 / 1441

页数：8

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