LASER ANNEALING OF BI-IMPLANTED ZNTE

被引：7

作者：

BONTEMPS, A ^{[1
]}

CAMPISANO, SU ^{[1
]}

FOTI, G ^{[1
]}

MONDIO, G ^{[1
]}

SAITTA, G ^{[1
]}

机构：

[1] UNIV CATANIA,IST STRUTTURA MATERIA,I-95129 CATANIA,ITALY

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 07期

关键词：

D O I：

10.1063/1.91573

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：542 / 544

页数：3

共 8 条

[1] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J].

BAERI, P ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :788-797

[2] CHANNELLING STUDIES OF ION IMPLANTATION INDUCED LATTICE DEFECTS IN ZINC TELLURIDE. [J].

Bontemps, A. ;

Ligeon, E. ;

Danielou, R. .

Radiation Effects, 1974, 22 (03) :195-204

[3]

BONTEMPS A, 1977, THESIS U GRENOBLE

[4]

FERRIS SD, 1979, LASER SOLID INTERACT

[5] LASER ANNEALING OF SELF-ION DAMAGED SILICON [J].

FOTI, G ;

CAMPISANO, SU ;

BAERI, P ;

RIMINI, E ;

TSENG, WF .

APPLIED PHYSICS LETTERS, 1979, 35 (09) :701-703

[6] SEM AND PHOTO-LUMINESCENCE STUDY OF LI SEGREGATION IN ANNEALED ZINC TELLURIDE [J].

MAGNEA, N ;

BENSAHEL, D ;

PFISTER, JC .

SOLID STATE COMMUNICATIONS, 1979, 29 (01) :35-38

[7] ELECTRICAL AND OPTICAL-IDENTIFICATION OF THE PERSISTENT ACCEPTOR AS COPPER IN ZNTE [J].

MAGNEA, N ;

BENSAHEL, D ;

PAUTRAT, JL ;

SAMINADAYAR, K ;

PFISTER, JC .

SOLID STATE COMMUNICATIONS, 1979, 30 (05) :259-263

[8] CALCULATED AND MEASURED REFLECTIVITY OF ZNTE AND ZNSE [J].

WALTER, JP ;

COHEN, ML ;

PETROFF, Y ;

BALKANSKI, M .

PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (06) :2661-+

← 1 →