2 WAVELENGTH OPTICALLY CONTROLLED LATCH AND AND GATE

被引:4
作者
AN, X [1 ]
GEIB, KM [1 ]
HAFICH, MJ [1 ]
CRUMBAKER, TE [1 ]
SILVESTRE, P [1 ]
BEYETTE, FR [1 ]
FELD, SA [1 ]
ROBINSON, GY [1 ]
WILMSEN, CW [1 ]
机构
[1] COLORADO STATE UNIV,DEPT ELECT ENGN,FT COLLINS,CO 80523
关键词
D O I
10.1063/1.107831
中图分类号
O59 [应用物理学];
学科分类号
摘要
A new optical device which functions either as a gated latch or an AND gate is demonstrated. This device utilizes two different wavelengths of input light and is composed of two heterojunction phototransistors (HPTs) vertically integrated with a light emitting diode. The collector-base regions of the two HPTs are fabricated from different band-gap materials and thus, respond to different wavelengths of input light. The device structure was fabricated from InGaAsP/InP epitaxial layers grown by gas source MBE. The gated latch and AND gate are shown to have an on/off contrast ratio of 12 and 6, respectively.
引用
收藏
页码:636 / 638
页数:3
相关论文
共 15 条
[1]  
BEYETTE FR, 1992, PHOTONICS TECHNOL LE, V4, P390
[2]   CASCADABLE SURFACE-EMITTING LASER LOGIC - DEMONSTRATION OF BOOLEAN LOGIC [J].
BRYAN, RP ;
OLBRIGHT, GR ;
CHENG, J .
ELECTRONICS LETTERS, 1991, 27 (11) :893-894
[3]   OPTICALLY CONTROLLED SURFACE-EMITTING LASERS [J].
CHAN, WK ;
HARBISON, JP ;
VONLEHMEN, AC ;
FLOREZ, LT ;
NGUYEN, CK ;
SCHWARZ, SA .
APPLIED PHYSICS LETTERS, 1991, 58 (21) :2342-2344
[4]   ELECTRICAL AND OPTICAL FEEDBACK IN AN INGAAS/INP LIGHT-AMPLIFYING OPTICAL SWITCH (LAOS) [J].
FELD, SA ;
BEYETTE, FR ;
HAFICH, MJ ;
LEE, HY ;
ROBINSON, GY ;
WILMSEN, CW .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (11) :2452-2459
[5]  
HANNA MC, 1986, I PHYS C SER, V96, P543
[6]   OPTICAL FLIP-FLOP BASED ON PARALLEL-CONNECTED ALGAAS/GAAS PNPN STRUCTURES [J].
HARA, K ;
KOJIMA, K ;
MITSUNAGA, K ;
KYUMA, K .
OPTICS LETTERS, 1990, 15 (13) :749-751
[7]   32X32 2-DIMENSIONAL ARRAY OF VERTICAL TO SURFACE TRANSMISSION ELECTROPHOTONIC DEVICES WITH A PNPN STRUCTURE [J].
KURIHARA, K ;
TASHIRO, Y ;
OGURA, I ;
SUGIMOTO, M ;
KASAHARA, K .
IEE PROCEEDINGS-J OPTOELECTRONICS, 1991, 138 (02) :161-163
[8]   INTEGRATION OF 1024 INGAASP INP OPTOELECTRONIC BISTABLE SWITCHES [J].
MATSUDA, K ;
TAKIMOTO, K ;
LEE, DH ;
SHIBATA, J .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (07) :1630-1634
[9]   INTEGRATION OF INGAASP/INP OPTOELECTRONIC BISTABLE SWITCHES WITH A FUNCTION OF OPTICAL ERASING [J].
MATSUDA, K ;
ADACHI, H ;
CHINO, T ;
SHIBATA, J .
IEEE ELECTRON DEVICE LETTERS, 1990, 11 (10) :442-444
[10]   INGAASP INP WAVELENGTH-SELECTIVE HETEROJUNCTION PHOTOTRANSISTORS [J].
MITSUYU, T ;
FUJITA, S ;
SASAKI, A .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (06) :812-817