INTEGRATION OF 1024 INGAASP INP OPTOELECTRONIC BISTABLE SWITCHES

被引:29
作者
MATSUDA, K
TAKIMOTO, K
LEE, DH
SHIBATA, J
机构
[1] Opto-Electronics Research Laboratory, Matsushita Electric Industrial Co., Ltd., 3-15 Yagumo-Nakamachi, Moriguchi
关键词
D O I
10.1109/16.55749
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have proposed and fabricated a photonic parallel memory (PPM) which is an array of 32 x 32 optoelectronic bistable switches. The switch consists of a heterojunction phototransistor (HPT) and a light-emitting diode (LED), and optical positive feedback from LED to HPT is the cause of bistability. PPM can be written in and read out with 1-kb parallel optical signals. PPM has been fabricated successfully and memory operation has been demonstrated as expected. Dissipation current for a single switch and the input optical power necessary to turn on the switch were 600 μA and 20 μW, respectively. Light pulse with a width of 5 ns was able to turn on the switch and product of turn-on power and pulsewidth for short pulse region was 1.5 pJ. © 1990 IEEE
引用
收藏
页码:1630 / 1634
页数:5
相关论文
共 11 条
[1]  
ALFEROV ZI, 1972, SOV PHYS SEMICOND+, V5, P1314
[3]   ULTRAFAST ALL-OPTICAL GATE WITH SUBPICOSECOND ON AND OFF RESPONSE-TIME [J].
HULIN, D ;
MYSYROWICZ, A ;
ANTONETTI, A ;
MIGUS, A ;
MASSELINK, WT ;
MORKOC, H ;
GIBBS, HM ;
PEYGHAMBARIAN, N .
APPLIED PHYSICS LETTERS, 1986, 49 (13) :749-751
[4]   THE QUANTUM WELL SELF-ELECTROOPTIC EFFECT DEVICE - OPTOELECTRONIC BISTABILITY AND OSCILLATION, AND SELF-LINEARIZED MODULATION [J].
MILLER, DAB ;
CHEMLA, DS ;
DAMEN, TC ;
WOOD, TH ;
BURRUS, CA ;
GOSSARD, AC ;
WIEGMANN, W .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (09) :1462-1476
[5]   NEW BISTABLE OPTICAL-DEVICE USING SEMICONDUCTOR-LASER DIODE [J].
OGAWA, Y ;
ITO, H ;
INABA, H .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (09) :L646-L648
[6]   INGAASP-INP HETEROJUNCTION PHOTOTRANSISTORS AND LIGHT AMPLIFIERS [J].
SASAKI, A ;
KUZUHARA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (04) :L283-L286
[7]   HIGH-CURRENT INGAASP-INP PHOTOTRANSISTORS AND SOME MONOLITHIC OPTICAL-DEVICES [J].
SASAKI, A ;
MATSUDA, K ;
KIMURA, Y ;
FUJITA, S .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) :1382-1388
[8]   OPTOELECTRONIC INTEGRATED DEVICE WITH LIGHT AMPLIFICATION AND OPTICAL BISTABILITY [J].
SASAKI, A ;
TANEYA, M ;
YANO, H ;
FUJITA, S .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (06) :805-811
[9]   REACTIVE ION ETCHING OF INP WITH BR2-CONTAINING GASES TO PRODUCE SMOOTH, VERTICAL WALLS - FABRICATION OF ETCHED-FACETED LASERS [J].
TAKIMOTO, K ;
OHNAKA, K ;
SHIBATA, J .
APPLIED PHYSICS LETTERS, 1989, 54 (20) :1947-1949
[10]   A NEW DOUBLE HETEROSTRUCTURE OPTOELECTRONIC SWITCHING DEVICE USING MOLECULAR-BEAM EPITAXY [J].
TAYLOR, GW ;
SIMMONS, JG ;
CHO, AY ;
MAND, RS .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) :596-600