INGAASP INP WAVELENGTH-SELECTIVE HETEROJUNCTION PHOTOTRANSISTORS

被引：11

作者：

MITSUYU, T

FUJITA, S

SASAKI, A

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 06期

关键词：

D O I：

10.1109/T-ED.1984.21612

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：812 / 817

页数：6

共 16 条

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[2]

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[7] AL0.5GA0.5AS-GAAS HETEROJUNCTION PHOTOTRANSISTORS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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[8] AN ANALYSIS OF THE PERFORMANCE OF HETEROJUNCTION PHOTOTRANSISTORS FOR FIBER OPTIC COMMUNICATIONS [J].

MILANO, RA ;

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[9] THEORETICAL ANALYSIS OF HETEROJUNCTION PHOTOTRANSISTORS [J].

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TAKAHASH.K .

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[10] GROWTH OF LATTICE-MATCHED INGAASP-INP DOUBLE-HETEROSTRUCTURES BY 2-PHASE SUPERCOOLED SOLUTION TECHNIQUE [J].

SAKAI, K ;

AKIBA, S ;

YAMAMOTO, T .

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