SIGNIFICANT EFFECT OF LATERAL RESISTIVITY ON OPTICAL NONLINEAR RESPONSES OF A QUANTUM-WELL P-I-N PHOTODIODE

被引:5
作者
ABE, Y
TOKUDA, Y
机构
[1] Central Research Laboratory, Mitsubishi Electric Corporation, Amagasaki
关键词
D O I
10.1063/1.110167
中图分类号
O59 [应用物理学];
学科分类号
摘要
A p-i-n photodiode with GaAs/AlAs asymmetric coupled quantum well absorption layers at room temperature exhibited an optical bistable response for a focused optical beam with no external electrical element. From dependence of the bistable responses on a position of the light beam, it is concluded that lateral resistance of the p-AlGaAs layer plays an important role, and thus the result is interpreted in terms of a response of a nonbiased self-electro-optic effect device with an internal feedback element.
引用
收藏
页码:3259 / 3261
页数:3
相关论文
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