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- [1] DEFECTS IN AMORPHOUS CHALCOGENIDES AND SILICON[J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 3 - 14ADLER, D
- [2] AMER NM, 1984, SEMICONDUCT SEMIMET, V21, P83
- [3] OPTICAL-PROPERTIES OF GOLD ACCEPTOR AND DONOR LEVELS IN SILICON[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (06) : 2658 - 2665BRAUN, SGRIMMEISS, HG
- [4] IDENTIFICATION OF THE DANGLING-BOND STATE WITHIN THE MOBILITY GAP OF ALPHA-SI-H BY DEPLETION-WIDTH-MODULATED ELECTRON-SPIN-RESONANCE SPECTROSCOPY[J]. PHYSICAL REVIEW LETTERS, 1982, 48 (02) : 109 - 112COHEN, JDHARBISON, JPWECHT, KW
- [5] COHEN JD, 1984, SEMICONDUCT SEMIMET, V21, P9
- [6] ELECTRON-SPIN RESONANCE OF DOPED GLOW-DISCHARGE AMORPHOUS-SILICON[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 105 (01): : 265 - 274DERSCH, HSTUKE, JBEICHLER, J
- [7] DETERMINATION OF THE RECOMBINATION RATE CONSTANTS IN AMORPHOUS-SILICON FROM DOUBLE-INJECTION EXPERIMENTS[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1986, 53 (06): : 463 - 475DOGHMANE, ASPEAR, WE
- [8] ASSESSMENT OF LATTICE-RELAXATION EFFECTS IN TRANSITIONS FROM MOBILITY GAP STATES IN HYDROGENATED AMORPHOUS-SILICON USING TRANSIENT PHOTOCAPACITANCE TECHNIQUES[J]. APPLIED PHYSICS LETTERS, 1986, 49 (12) : 722 - 724GELATOS, AVCOHEN, JDHARBISON, JP
- [9] LIGHT-INDUCED METASTABLE EFFECT ON THE SHORT-LIVED PHOTOINDUCED MIDGAP ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 433 - 436HIRABAYASHI, IMORIGAKI, K
- [10] DEEP IMPURITIES IN SEMICONDUCTORS .2. THE OPTICAL-CROSS-SECTION[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (07): : 1093 - 1101INKSON, JC