STUDIES OF SIO2 AND SI-SIO2 INTERFACES BY XPS

被引：35

作者：

HATTORI, T

NISHINA, T

机构：

[1] Department of Electrical Engineering, Faculty of Engineering, Musashi Institute of Technology, Setagayaku, Tokyo

来源：

SURFACE SCIENCE | 1979年 / 86卷 / JUL期

关键词：

D O I：

10.1016/0039-6028(79)90434-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The method to determine thickness distribution in thin films by X-ray photoelectron spectroscopy (XPS) has been modified for the determination of the thickness distribution of thermally grown silicon oxide films and the thickness of the SiSiO2 interfacial transition layer. The simple method to determine the thickness of the interfacial layer is given. The thickness of the interfacial layer determined by this method is approximately 10 Å. © 1979.

引用

页码：555 / 561

页数：7

共 21 条

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KRIVANEK, OL
SHENG, TT
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[J]. APPLIED PHYSICS LETTERS, 1978, 32 (07) : 437 - 439
[17] KRIVANEK OL, 1978, P INT TOPICAL C SIO2
[18] X-RAY PHOTOELECTRON-SPECTROSCOPY OF SIO2-SI INTERFACIAL REGIONS - ULTRATHIN OXIDE-FILMS
RAIDER, SI
FLITSCH, R
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1978, 22 (03) : 294 - 303
[19] RAIDER SI, 1978, P INT TOPICAL C SIO2
[20] WAGNER JF, 1978, P INT TOPICAL C SIO2

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