RESPONSE OF A SILICON P-N SOLAR-CELL TO HIGH-INTENSITY LIGHT

被引：9

作者：

AGARWALA, A

TEWARY, VK

机构：

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1980年 / 13卷 / 10期

关键词：

D O I：

10.1088/0022-3727/13/10/018

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1885 / 1898

页数：14

共 15 条

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[3]

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[7] AN EXPERIMENTAL INVESTIGATION OF MAXIMUM PHOTO-EMF OF A P-N JUNCTION [J].

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[8]

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[9]

Lindmayer J., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P782

[10]

McKelvey J. P., 1966, SOLID STATE SEMICOND

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