THE INFLUENCE OF BOMBARDMENT CONDITIONS UPON THE SPUTTERING AND SECONDARY ION YIELDS OF SILICON

被引：85

作者：

MORGAN, AE

DEGREFTE, HAM

WARMOLTZ, N

WERNER, HW

TOLLE, HJ

机构：

[1] PHILIPS RES LABS,EINDHOVEN,NETHERLANDS

[2] PHILIPS FORSCHUNGSLAB HAMBURG GMBH,D-2000 HAMBURG 54,FED REP GER

来源：

APPLIED SURFACE SCIENCE | 1981年 / 7卷 / 04期

关键词：

D O I：

10.1016/0378-5963(81)90084-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：372 / 392

页数：21

共 34 条

[1]

ANDERSEN CA, 1969, INT J MASS SPECTROM, V2, P61

[2]

Andersen H. H., 1973, Radiation Effects, V19, P139, DOI 10.1080/00337577308232233

[3] NONLINEAR EFFECTS IN HEAVY-ION SPUTTERING [J].

ANDERSEN, HH ;

BAY, HL .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) :953-954

[4] DEPTH RESOLUTION OF SPUTTER PROFILING [J].

ANDERSEN, HH .

APPLIED PHYSICS, 1979, 18 (02) :131-140

[5] SPUTTERING AND ION-SOURCE TECHNOLOGY [J].

ANDERSEN, HH .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (02) :959-966

[6] ENERGY AND FLUENCE DEPENDENCE OF THE SPUTTERING YIELD OF SILICON BOMBARDED WITH ARGON AND XENON [J].

BLANK, P ;

WITTMAACK, K .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) :1519-1528

[7]

CANTAGREL M, 1973, J MATER SCI, V8, P1711, DOI 10.1007/BF02403521

[8] EARLY STAGES OF OXYGEN-ADSORPTION ON SILICON SURFACES AS SEEN BY ELECTRON-SPECTROSCOPY [J].

CARRIERE, B ;

DEVILLE, JP .

SURFACE SCIENCE, 1979, 80 (01) :278-286

[9] ION SORPTION IN PRESENCE OF SPUTTERING [J].

CARTER, G ;

COLLIGON, JS ;

LECK, JH .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1962, 79 (508) :299-&

[10]

CARTER G, 1979, RADIAT EFF LETT, V43, P125, DOI 10.1080/01422447908229237

← 1 2 3 4 →