ELECTRICAL-PROPERTIES OF CW LASER-ANNEALED ION-IMPLANTED POLYCRYSTALLINE SILICON

被引：19

作者：

ROULET, ME ^{[1
]}

DUTOIT, M ^{[1
]}

LUTHY, W ^{[1
]}

AFFOLTER, K ^{[1
]}

机构：

[1] UNIV BERN,INST APPL PHYS,CH-3012 BERN,SWITZERLAND

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 08期

关键词：

D O I：

10.1063/1.92064

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：737 / 739

页数：3

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共 12 条

[1] TRANSPORT PROPERTIES OF POLYCRYSTALLINE SILICON FILMS
BACCARANI, G
RICCO, B
SPADINI, G
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) : 5565 - 5570
[2] SUBSTRATE AND DOPING EFFECTS UPON LASER-INDUCED EPITAXY OF AMORPHOUS SILICON
BEAN, JC
LEAMY, HJ
POATE, JM
ROZGONYI, GA
VANDERZIEL, JP
WILLIAMS, JS
CELLER, GK
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 881 - 885
[3] CW LASER ANNEAL OF POLYCRYSTALLINE SILICON - CRYSTALLINE-STRUCTURE, ELECTRICAL-PROPERTIES
GAT, A
GERZBERG, L
GIBBONS, JF
MAGEE, TJ
PENG, J
HONG, JD
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 775 - 778
[4] GIBBONS JF, 1975, PROJECTED RANGE STAT
[5] MONOLITHIC INTEGRATED-CIRCUIT FABRICATED IN LASER-ANNEALED POLYSILICON
KAMINS, TI
LEE, KF
GIBBONS, JF
SARASWAT, KC
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) : 290 - 293
[6] HALL MOBILITY IN CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON
KAMINS, TI
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4357 - &
[7] ROULET ME, 1980, SPR M SWISS PHYS SOC
[8] Runyan W.R, 1975, SEMICONDUCTOR MEASUR
[9] DIRECT MEASUREMENT OF ELECTRON-EMISSION FROM DEFECT STATES AT SILICON GRAIN-BOUNDARIES
SEAGER, CH
PIKE, GE
GINLEY, DS
[J]. PHYSICAL REVIEW LETTERS, 1979, 43 (07) : 532 - 535
[10] ELECTRICAL PROPERTIES OF POLYCRYSTALLINE SILICON FILMS
SETO, JYW
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) : 5247 - 5254