PROPOSAL FOR STRAINED TYPE-II SUPERLATTICE INFRARED DETECTORS

被引：722

作者：

SMITH, DL ^{[1
]}

MAILHIOT, C ^{[1
]}

机构：

[1] XEROX CORP,WEBSTER RES CTR,WEBSTER,NY 14580

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 06期

关键词：

D O I：

10.1063/1.339468

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2545 / 2548

页数：4

共 22 条

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[4] HARRISON WA, 1985, J VAC SCI TECHNOL B, V3, P1232
[5] MAGNETIC FIELD-INDUCED SEMIMETAL-TO-SEMICONDUCTOR TRANSITION IN INAS-GASB SUPER-LATTICES
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[7] ELECTRONIC-STRUCTURE OF [001]-GROWTH-AXIS AND [111]-GROWTH-AXIS SEMICONDUCTOR SUPERLATTICES
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[J]. PHYSICAL REVIEW B, 1987, 35 (03): : 1242 - 1259
[8] K-P THEORY OF SEMICONDUCTOR SUPERLATTICE ELECTRONIC-STRUCTURE .2. APPLICATION TO GA1-XINXAS-AL1-YINYAS(100) SUPERLATTICES
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SMITH, DL
[J]. PHYSICAL REVIEW B, 1986, 33 (12): : 8360 - 8372
[9] CORRELATION FOR III-V SEMICONDUCTORS AND II-VI-SEMICONDUCTORS OF AU SCHOTTKY-BARRIER ENERGY WITH ANION ELECTRONEGATIVITY
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[J]. PHYSICAL REVIEW LETTERS, 1976, 36 (01) : 56 - 58
[10] METAL-SEMICONDUCTOR SURFACE BARRIERS
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[J]. SOLID-STATE ELECTRONICS, 1966, 9 (11-1) : 1023 - &

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