BURIED HETEROSTRUCTURE LASERS BY SILICON IMPLANTED, IMPURITY INDUCED DISORDERING

被引:9
作者
WELCH, DF
SCIFRES, DR
CROSS, PS
STREIFER, W
机构
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D O I
10.1063/1.98689
中图分类号
O59 [应用物理学];
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页码:1401 / 1403
页数:3
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共 11 条
[1]   COUPLED STRIPE ALXGA1-XAS-GAAS QUANTUM-WELL LASERS DEFINED BY IMPURITY-INDUCED (SI) LAYER DISORDERING [J].
DEPPE, DG ;
JACKSON, GS ;
HOLONYAK, N ;
BURNHAM, RD ;
THORNTON, RL .
APPLIED PHYSICS LETTERS, 1987, 50 (11) :632-634
[2]  
FUKUZAWA T, 1984, APPL PHYS LETT, V45
[3]   SI-IMPLANTED AND DISORDERED STRIPE-GEOMETRY ALXGA1-XAS-GAAS QUANTUM WELL LASERS [J].
GAVRILOVIC, P ;
MEEHAN, K ;
GUIDO, LJ ;
HOLONYAK, N ;
EU, V ;
FENG, M ;
BURNHAM, RD .
APPLIED PHYSICS LETTERS, 1985, 47 (09) :903-905
[4]   INTERDIFFUSION OF AL AND GA IN SI-IMPLANTED GAAS-ALAS SUPERLATTICES [J].
HIRAYAMA, Y ;
HORIKOSHI, Y ;
OKAMOTO, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (12) :1568-1572
[5]   FABRICATION OF INDEX-GUIDED ALGAAS MQW LASERS BY SELECTIVE DISORDERING USING BE FOCUSED ION-BEAM IMPLANTATION [J].
ISHIDA, K ;
TAKAMORI, T ;
MATSUI, K ;
FUKUNAGA, T ;
MORITA, T ;
MIYAUCHI, E ;
HASHIMOTO, H ;
NAKASHIMA, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (09) :L783-L785
[6]  
LAIDIG WD, 1984, APPL PHYS LETT, V45, P549
[7]   STRIPE-GEOMETRY ALXGA1-XAS-GAAS QUANTUM WELL HETEROSTRUCTURE LASERS DEFINED BY SI DIFFUSION AND DISORDERING [J].
MEEHAN, K ;
GAVRILOVIC, P ;
HOLONYAK, N ;
BURNHAM, RD ;
THORNTON, RL .
APPLIED PHYSICS LETTERS, 1985, 46 (01) :75-77
[8]   ALGAAS WINDOW STRIPE BURIED MULTIQUANTUM WELL LASERS [J].
NAKASHIMA, H ;
SEMURA, S ;
OHTA, T ;
KURODA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (08) :L647-L649
[9]   HIGH-POWER (2.1 W) 10-STRIPE ALGAAS LASER ARRAYS WITH SI DISORDERED FACET WINDOWS [J].
THORNTON, RL ;
WELCH, DF ;
BURNHAM, RD ;
PAOLI, TL ;
CROSS, PS .
APPLIED PHYSICS LETTERS, 1986, 49 (23) :1572-1574
[10]  
THORNTON RL, 1986, APPL PHYS LETT, V48