DOUBLE MODULATION-DOPED ALGAAS/INGAAS HETEROSTRUCTURE WITH A GRADED COMPOSITION IN THE QUANTUM-WELL

被引：12

作者：

YOO, TK ^{[1
]}

MANDEVILLE, P ^{[1
]}

PARK, H ^{[1
]}

SCHAFF, WJ ^{[1
]}

EASTMAN, LF ^{[1
]}

机构：

[1] CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 16期

关键词：

D O I：

10.1063/1.108370

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new double modulation-doped AlGaAs/InGaAs heterostructure with a graded composition in the InGaAs quantum well (QW) has been designed and electrically characterized. An InGaAs QW with a rectangular-like potential profile in the presence of the two dimensional electron gas is obtained by a two-step grading of the In composition, which results in a broad and symmetric electron distribution profile even under various voltages. The Hall measurement shows a very high electron mobility of 7230 cm2/V s and an electron sheet density of 4.1 X 10(12)/cm2 at room temperature. To our knowledge, this is the highest mobility ever reported so far for the double modulation-doped Al0.3Ga0.7As/In0.2Ga0.8As field-effect transistor structure.

引用

页码：1942 / 1944

页数：3

共 17 条

[1]

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