PHYSICS AND PERSPECTIVES OF SI/GE HETEROSTRUCTURES AND SUPERLATTICES

被引：20

作者：

ABSTREITER, G

机构：

[1] Walter Schottky Institut, Technische Universität München, Garching

来源：

PHYSICA SCRIPTA | 1993年 / T49A卷

关键词：

D O I：

10.1088/0031-8949/1993/T49A/006

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Recent developments in Si/Ge heteroepitaxy led to spectacular improvements of electrical and optical properties of Si based heterostructures and superlattices. We discuss the realization of high mobility electron and hole channels in Si or Ge quantum wells, the band gap related luminescence in SiGe quantum wells and strain symmetrized Si/Ge short period superlattices and far-infrared intersubband transitions in narrow quantum wells. Possible device applications are pointed out.

引用

页码：42 / 45

页数：4

共 27 条

[1] STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES [J].