DETAILED OPTICAL CHARACTERIZATION OF THE DEEP CR LEVEL IN GAAS

被引：17

作者：

NOUAILHAT, A

LITTY, F

LOUALICHE, S

LEYRAL, P

GUILLOT, G

机构：

来源：

JOURNAL DE PHYSIQUE | 1982年 / 43卷 / 05期

关键词：

Compendex;

D O I：

10.1051/jphys:01982004305081500

中图分类号：

学科分类号：

摘要：

SEMICONDUCTING GALLIUM COMPOUNDS

引用

页码：815 / 825

页数：11

共 52 条

[1] GAAS LOWER CONDUCTION-BAND MINIMA - ORDERING AND PROPERTIES [J].

ASPNES, DE .

PHYSICAL REVIEW B, 1976, 14 (12) :5331-5343

[2] DEEP-LEVEL THERMAL SPECTROSCOPY AND DEEP-LEVEL OPTICAL SPECTROSCOPY - APPLICATION TO STUDY OF LATTICE-RELAXATION [J].

BOIS, D ;

CHANTRE, A .

REVUE DE PHYSIQUE APPLIQUEE, 1980, 15 (03) :631-646

[3]

BOIS D, 1974, J PHYS-PARIS, V35, P241

[4] ELECTRICAL COMPENSATION IN SEMI-INSULATING GALLIUM-ARSENIDE [J].

BROZEL, MR ;

BUTLER, J ;

NEWMAN, RC ;

RITSON, A ;

STIRLAND, DJ ;

WHITEHEAD, C .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (09) :1857-1863

[5] SPIN-ORBIT-SPLITTING IN CRYSTALLINE AND COMPOSITIONALLY DISORDERED SEMICONDUCTORS [J].

CHADI, DJ .

PHYSICAL REVIEW B, 1977, 16 (02) :790-796

[6]

Chantre A., 1980, Journal of the Physical Society of Japan, V49, P247

[7] DEEP-LEVEL OPTICAL SPECTROSCOPY IN GAAS [J].

CHANTRE, A ;

VINCENT, G ;

DUBOIS .

PHYSICAL REVIEW B, 1981, 23 (10) :5335-5359

[8]

CHANTRE A, 1980, 15TH P INT C PHYS SE

[9]

CHANTRE A, 1979, THESIS GRENOBLE

[10]

DEVEAUD B, 1980, REV PHYS APPL, V15, P671, DOI 10.1051/rphysap:01980001503067100

← 1 2 3 4 5 6 →