DETAILED OPTICAL CHARACTERIZATION OF THE DEEP CR LEVEL IN GAAS

被引：17

作者：

NOUAILHAT, A

LITTY, F

LOUALICHE, S

LEYRAL, P

GUILLOT, G

机构：

来源：

JOURNAL DE PHYSIQUE | 1982年 / 43卷 / 05期

关键词：

Compendex;

D O I：

10.1051/jphys:01982004305081500

中图分类号：

学科分类号：

摘要：

SEMICONDUCTING GALLIUM COMPOUNDS

引用

页码：815 / 825

页数：11

共 52 条

[21] EPR OF CR(3D3) IN GAAS - EVIDENCE FOR STRONG JAHN-TELLER EFFECTS [J].

KREBS, JJ ;

STAUSS, GH .

PHYSICAL REVIEW B, 1977, 15 (01) :17-22

[22] EPR OF CR2+(3D4) IN GALLIUM-ARSENIDE - JAHN-TELLER DISTORTION AND PHOTOINDUCED CHARGE CONVERSION [J].

KREBS, JJ ;

STAUSS, GH .

PHYSICAL REVIEW B, 1977, 16 (03) :971-973

[23]

KREBS JJ, 1979, PHYS REV B, V20, P795, DOI 10.1103/PhysRevB.20.795

[24] STUDY OF DEEP LEVELS IN GAAS BY CAPACITANCE SPECTROSCOPY [J].

LANG, DV ;

LOGAN, RA .

JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (05) :1053-1066

[25] OPTICAL CHARACTERIZATION OF THE DEEP CR LEVEL IN GAAS [J].

LEYRAL, P ;

LITTY, F ;

LOUALICHE, S ;

NOUAILHAT, A ;

GUILLOT, G .

SOLID STATE COMMUNICATIONS, 1981, 38 (04) :333-336

[26]

LEYRAL P, UNPUB

[27] FINE-STRUCTURE IN CATHODOLUMINESCENCE SPECTRUM FROM CHROMIUM-DOPED GALLIUM-ARSENIDE [J].

LIGHTOWLERS, EC ;

PENCHINA, CM .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (09) :L405-L409

[28]

LIN AL, 1976, J APPL PHYS, V47, P1852, DOI 10.1063/1.322904

[29] PHOTOELECTRONIC PROPERTIES OF HIGH-RESISTIVITY GAAS-CR [J].

LIN, AL ;

BUBE, RH .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (05) :1859-1867

[30] INTERPRETATION OF PHOTOCONDUCTIVITY AND PHOTO-HALL SPECTRA IN SEMI-INSULATING GAAS-CR [J].

LOOK, DC .

SOLID STATE COMMUNICATIONS, 1977, 24 (12) :825-828

← 1 2 3 4 5 6 →