POWER GAIN OF TRANSISTORS AT HIGH FREQUENCIES

被引:15
作者
LINDMAYER, J
机构
关键词
D O I
10.1016/0038-1101(62)90008-4
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:171 / 175
页数:5
相关论文
共 8 条
[1]   STRUCTURE-DETERMINED GAIN-BAND PRODUCT OF JUNCTION TRIODE TRANSISTORS [J].
EARLY, JM .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (12) :1924-1927
[2]   BETA CUTOFF FREQUENCIES OF JUNCTION TRANSISTORS [J].
LINDMAYER, J ;
WRIGLEY, CY .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (02) :194-&
[3]  
LINDMAYER J, 1959, ELECTRONICS, V32, P31
[4]  
LINDMAYER J, 1962, SOLID STATE ELECTRON, V3, P419
[5]  
LINDMAYER J, 1961, SOLID ST ELECTRON, V2, P84
[6]  
MCCOTTER J, 1961, IRE T ED, V8, P11
[7]  
MOLL JL, 1956, P IRE, V44, P74
[8]   HIGH-FREQUENCY POWER GAIN OF JUNCTION TRANSISTORS [J].
PRITCHARD, RL .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1955, 43 (09) :1075-1085