PARTICLE-BEAM FABRICATION AND INSITU PROCESSING OF INTEGRATED-CIRCUITS

被引：4

作者：

STECKL, AJ ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,DEPT ELECT COMP & SYST ENGN,TROY,NY 12181

来源：

PROCEEDINGS OF THE IEEE | 1986年 / 74卷 / 12期

关键词：

D O I：

10.1109/PROC.1986.13690

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

107

引用

页码：1753 / 1774

页数：22

共 108 条

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MURAY, A ;

ISAACSON, M .

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[2] MASKED ION-BEAM LITHOGRAPHY - A FEASIBILITY DEMONSTRATION FOR SUBMICROMETER DEVICE FABRICATION [J].

BARTELT, JL ;

SLAYMAN, CW ;

WOOD, JE ;

CHEN, JY ;

MCKENNA, CM ;

MINNING, CP ;

COAKLEY, JF ;

HOLMAN, RE ;

PERRYGO, CM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :1166-1171

[3]

BAUERLE D, 1982, APPL PHYS LETT, V40, P819, DOI 10.1063/1.93272

[4]

BEAN JC, 1981, 1981 INT EL DEV M, P6

[5]

BERTRAM WJ, 1983, VLSI TECHNOLOGY, P605

[6]

BREWER GR, 1980, ELECTRON BEAM TECHNO, pCH1

[7]

BRODIE I, 1982, PHYSICS MICROFABRICA

[8]

BROERS AN, 1985, SOLID STATE TECHNOL, V28, P119

[9]

BROWN WL, 1983, P ISIAT 83 KYOTO, P2738

[10]

CASEY MC, 1985, TECHNOLOGY PHYSICS M, pCH13

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