MASKED ION-BEAM LITHOGRAPHY - A FEASIBILITY DEMONSTRATION FOR SUBMICROMETER DEVICE FABRICATION

被引：45

作者：

BARTELT, JL ^{[1
]}

SLAYMAN, CW ^{[1
]}

WOOD, JE ^{[1
]}

CHEN, JY ^{[1
]}

MCKENNA, CM ^{[1
]}

MINNING, CP ^{[1
]}

COAKLEY, JF ^{[1
]}

HOLMAN, RE ^{[1
]}

PERRYGO, CM ^{[1
]}

机构：

[1] HUGHES AIRCRAFT CO,CULVER CITY,CA 90230

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 04期

关键词：

D O I：

10.1116/1.571236

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1166 / 1171

页数：6

共 9 条

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[3] RADIATION-LEVELS ASSOCIATED WITH ADVANCED LITHOGRAPHIC TECHNIQUES
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[5] ION-BEAM EXPOSURE CHARACTERISTICS OF RESISTS
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[6] ION-BEAM LITHOGRAPHY FOR IC-FABRICATION WITH SUBMICROMETER FEATURES
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OLNEY, RD
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1897 - 1900
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