RADIATION-LEVELS ASSOCIATED WITH ADVANCED LITHOGRAPHIC TECHNIQUES

Estimates of the radiation absorbed dose in critical device oxide layers due to x-ray and direct-write electron beam lithography are developed. Layered structures of photoresist, aluminum, silicon dioxide, and silicon are used for explicit calculations. It is shown that radiation levels in the Megarad (SiO2) range can be expected for both of these advanced lithographic techniques. The consequences of this process-induced radiation damage are briefly considered. © 1979, The Electrochemical Society, Inc. All rights reserved.