RADIATION EFFECTS ON SEMICONDUCTOR-DEVICES

被引：37

作者：

GREGORY, BL ^{[1
]}

GWYN, CW ^{[1
]}

机构：

[1] SANDIA LABS, ALBUQUERQUE, NM 87115 USA

来源：

PROCEEDINGS OF THE IEEE | 1974年 / 62卷 / 09期

关键词：

D O I：

10.1109/PROC.1974.9605

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1264 / 1273

页数：10

共 43 条

[1] RADIATION HARDENING OF P-MOS DEVICES BY OPTIMIZATION OF THERMAL S102 GATE INSULATOR [J].

AUBUCHON, KG .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) :117-+

[2]

BARNETT B, 1967, PHYSICS FAILURE ELEC, V5

[3]

BINDER D, 1969, AFWLTR693 AIR FORC W

[4] RADIATION FAILURE MODES IN CMOS INTEGRATED-CIRCUITS [J].

BURGHARD, RA ;

GWYN, CW .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1973, NS20 (06) :300-306

[5]

BURGHARD RA, 1973, DEC IEEE RAD EFF MOS

[6] INJECTION-LEVEL STUDIES IN NEUTRON-IRRADIATED SILICON [J].

CURTIS, OL ;

GERMANO, CA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1967, NS14 (06) :68-+

[7] EFFECTS OF OXYGEN AND DOPANT ON LIFETIME IN NEUTRON-IRRADIATED SILICON [J].

CURTIS, OL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1966, NS13 (06) :33-+

[8] ACCURATE CAPACITANCE CALCULATIONS FOR PN JUNCTIONS CONTAINING TRAPS [J].

EERNISSE, EP .

APPLIED PHYSICS LETTERS, 1971, 18 (05) :183-+

[9] APPLICATION OF DISTRIBUTED EQUILIBRIUM EQUIVALENT CIRCUIT MODEL TO SEMICONDUCTOR JUNCTIONS [J].

FORBES, L ;

SAH, CT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (12) :1036-+

[10] EXPERIMENTAL DETERMINATION OF GAIN DEGRADATION MECHANISMS [J].

GEORGE, W ;

CLARK, L .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) :387-+

← 1 2 3 4 5 →