PARTICLE-BEAM FABRICATION AND INSITU PROCESSING OF INTEGRATED-CIRCUITS

被引：4

作者：

STECKL, AJ ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,DEPT ELECT COMP & SYST ENGN,TROY,NY 12181

来源：

PROCEEDINGS OF THE IEEE | 1986年 / 74卷 / 12期

关键词：

D O I：

10.1109/PROC.1986.13690

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

107

引用

页码：1753 / 1774

页数：22

共 108 条

[41] DEVELOPMENT OF BORON LIQUID-METAL-ION SOURCE [J].

ISHITANI, T ;

UMEMURA, K ;

HOSOKI, S ;

TAKAYAMA, S ;

TAMURA, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (03) :1365-1369

[42]

ISHITANI T, 1984, JPN J APPL PHYS, V23, P330

[43] ULTRAFAST HIGH-RESOLUTION CONTACT LITHOGRAPHY WITH EXCIMER LASERS [J].

JAIN, K ;

WILLSON, CG ;

LIN, BJ .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1982, 26 (02) :151-159

[44] THE FLIP-AND-SHIFT SIGNAL ENHANCEMENT APPLICATION FOR A PREDICTIVE ELECTRON-BEAM PATTERN REGISTRATION MODEL [J].

KING, DC ;

STECKL, AJ ;

MORGENSTERN, JL ;

MCDONALD, JF ;

BOURGEOIS, MA ;

YEMC, DJ ;

ELMINYAWI, I .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01) :273-279

[45] ION-BEAM EXPOSURE OF RESIST MATERIALS [J].

KOMURO, M ;

ATODA, N ;

KAWAKATSU, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) :483-490

[46] ALL-DRY VACUUM SUB-MICRON LITHOGRAPHY [J].

KORCHKOV, VP ;

MARTYNOVA, TN ;

DANILOVICH, VS .

THIN SOLID FILMS, 1983, 101 (04) :369-372

[47] ION-SOURCE OF HIGH BRIGHTNESS USING LIQUID-METAL [J].

KROHN, VE ;

RINGO, GR .

APPLIED PHYSICS LETTERS, 1975, 27 (09) :479-481

[48] FET FABRICATION USING MASKLESS ION-IMPLANTATION [J].

KUBENA, RL ;

ANDERSON, CL ;

SELIGER, RL ;

JULLENS, RA ;

STEVENS, EH ;

LAGNADO, I .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :916-920

[49] POTENTIAL ENHANCED SB AND AS DOPING IN SI MOLECULAR-BEAM EPITAXY [J].

KUBIAK, RAA ;

LEONG, WY ;

PARKER, EHC .

APPLIED PHYSICS LETTERS, 1985, 46 (06) :565-567

[50] P-TYPE DOPING IN SI MOLECULAR-BEAM EPITAXY BY COEVAPORATION OF BORON [J].

KUBIAK, RAA ;

LEONG, WY ;

PARKER, EHC .

APPLIED PHYSICS LETTERS, 1984, 44 (09) :878-880

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