LOW-THERMAL-BUDGET PROCESS MODELING WITH THE PREDICT COMPUTER-PROGRAM

被引：33

作者：

FAIR, RB ^{[1
]}

机构：

[1] DUKE UNIV,DEPT ELECT ENGN,DURHAM,NC 27706

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 03期

关键词：

D O I：

10.1109/16.2452

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：285 / 293

页数：9

共 27 条

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[3]

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[4]

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[5]

FAIR RB, 1985, P SOC PHOTO-OPT INST, V530, P88, DOI 10.1117/12.946472

[6] MODELING RAPID THERMAL-DIFFUSION OF ARSENIC AND BORON IN SILICON [J].

FAIR, RB ;

WORTMAN, JJ ;

LIU, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) :2387-2394

[7] MODELING OF DOPANT DIFFUSION DURING RAPID THERMAL ANNEALING [J].

FAIR, RB .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :926-932

[8]

FAIR RB, IN PRESS

[9]

FAIR RB, 1985, ENERGY BEAM SOLID IN, V35, P381

[10]

GODFREY DJ, 1985, IMPURITY DIFFUSION G, V36, P143

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