A LARGE-SIGNAL, ANALYTIC MODEL FOR THE GAAS-MESFET

被引：54

作者：

KHATIBZADEH, MA ^{[1
]}

TREW, RJ ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1988年 / 36卷 / 02期

关键词：

D O I：

10.1109/22.3510

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：231 / 238

页数：8

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[10] A LARGE-SIGNAL MODEL FOR THE GAAS-MESFET [J].

MADJAR, A ;

ROSENBAUM, FJ .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1981, 29 (08) :781-788

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