A NONLINEAR GAAS-FET MODEL FOR USE IN THE DESIGN OF OUTPUT CIRCUITS FOR POWER-AMPLIFIERS

被引：252

作者：

CURTICE, WR ^{[1
]}

ETTENBERG, M ^{[1
]}

机构：

[1] CUNY, DEPT ELECT ENGN, NEW YORK, NY 10021 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1985年 / 33卷 / 12期

关键词：

AMPLIFIERS; POWER TYPE - COMPUTER SIMULATION - ELECTRIC NETWORKS; NONLINEAR - Equivalent Circuits - MATHEMATICAL MODELS;

D O I：

10.1109/TMTT.1985.1133229

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors have developed an FET model suitable for efficient calculations in the large-signal region. The model is useful for developing optimized output network designs for high-power GaAs FET amplifiers. The program efficiency results from the use of the harmonic balance technique, wherein the nonlinear FET is analyzed in the time domain and the linear circuit is analyzed in the frequency domain. A comparison was made with large-signal simulations using an accurate 2-D model for the GaAs FET. The output current and voltage waveforms in time could be directly compared for this case and the harmonic power contents were found to be in good agreement.

引用

页码：1383 / 1394

页数：12

共 17 条

[1] NUMERICAL STEADY-STATE ANALYSIS OF NON-LINEAR MICROWAVE CIRCUITS WITH PERIODIC EXCITATION [J].