INFLUENCE OF HOT FILAMENT - DC PLASMA COENHANCEMENT ON LOW-PRESSURE DIAMOND SYNTHESIS

被引：8

作者：

OKOLI, S ^{[1
]}

HAUBNER, R ^{[1
]}

LUX, B ^{[1
]}

机构：

[1] VIENNA TECH UNIV, INST CHEM TECHNOL INORGAN MAT, A-1060 VIENNA, AUSTRIA

来源：

关键词：

D O I：

10.1016/0925-9635(92)90117-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of bias during hot filament CVD diamond synthesis were investigated. Experiments were conducted at a constant substrate surface temperature using tantalum and tungsten filaments. An applied bias voltage (intense discharge) showed no significant influence on the diamond nucleation. However, as soon as the isolated crystals formed a diamond film which fully covered the substrate, an increase (60%-100%) in the growth rate of the diamond coating was observed.

引用

页码：955 / 962

页数：8

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