ELASTIC PROPERTIES OF NISI2, COSI2, AND FESI2 BY TIGHT-BINDING CALCULATIONS

被引:37
作者
MALEGORI, G
MIGLIO, L
机构
[1] Dipartimento di Fisica, Università di Milano, I-20133 Milano
来源
PHYSICAL REVIEW B | 1993年 / 48卷 / 13期
关键词
D O I
10.1103/PhysRevB.48.9223
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In a semiempirical tight-binding scheme we calculate the total-energy curve for Ni, Fe, and Co disilicides in the CaF2 structure. Agreement with recent linear muffin-tin-orbital, total-energy calculations, to which the band structure has been fitted at high-symmetry points of the Brillouin zone, is very satisfactory. Special attention has been devoted to the form of the phenomenological repulsive potential, in order to include the anharmonic contributions. Elastic constants, frozen-phonon frequencies, and cubic anharmonicities at the GAMMA point are also estimated, in quite good agreement with the existing experimental data.
引用
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页码:9223 / 9230
页数:8
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共 44 条
[1]   ELECTRONIC-STRUCTURE OF CHEVREL-PHASE HIGH-CRITICAL-FIELD SUPERCONDUCTORS [J].
ANDERSEN, OK ;
KLOSE, W ;
NOHL, H .
PHYSICAL REVIEW B, 1978, 17 (03) :1209-1237
[2]  
[Anonymous], ELECTRONIC STRUCTURE
[3]   ELECTRONIC-STRUCTURE AND PROPERTIES OF NI-SI(001) AND NI-SI(111) REACTIVE INTERFACES [J].
BISI, O ;
CHIAO, LW ;
TU, KN .
PHYSICAL REVIEW B, 1984, 30 (08) :4664-4674
[4]   SELF-CONSISTENT ENERGY-BANDS AND BONDING OF NISI2 [J].
BYLANDER, DM ;
KLEINMAN, L ;
MEDNICK, K ;
GRISE, WR .
PHYSICAL REVIEW B, 1982, 26 (12) :6379-6383
[5]   ELECTRONIC PROPERTIES OF SILICON-TRANSITION METAL INTERFACE COMPOUNDS [J].
Calandra, C. ;
Bisi, O. ;
Ottaviani, G. .
SURFACE SCIENCE REPORTS, 1985, 4 (5-6) :271-364
[6]   (110) SURFACE ATOMIC STRUCTURES OF COVALENT AND IONIC SEMICONDUCTORS [J].
CHADI, DJ .
PHYSICAL REVIEW B, 1979, 19 (04) :2074-2082
[7]   ENERGY-MINIMIZATION APPROACH TO ATOMIC GEOMETRY OF SEMICONDUCTOR SURFACES [J].
CHADI, DJ .
PHYSICAL REVIEW LETTERS, 1978, 41 (15) :1062-1065
[8]   THEORETICAL-STUDY OF THE ATOMIC-STRUCTURE OF SILICON (211), (311), AND (331) SURFACES [J].
CHADI, DJ .
PHYSICAL REVIEW B, 1984, 29 (02) :785-792
[9]   CALCULATION OF LATTICE DYNAMICAL PROPERTIES FROM ELECTRONIC ENERGIES - APPLICATION TO C, SI AND GE [J].
CHADI, DJ ;
MARTIN, RM .
SOLID STATE COMMUNICATIONS, 1976, 19 (07) :643-646
[10]   EPITAXIAL-GROWTH OF TRANSITION-METAL SILICIDES ON SILICON [J].
CHEN, LJ ;
TU, KN .
MATERIALS SCIENCE REPORTS, 1991, 6 (2-3) :53-140