SOLID-PHASE EPITAXIAL REGROWTH OF ION-IMPLANTED LAYERS IN GAAS

被引：17

作者：

NISSIM, YI ^{[1
]}

CHRISTEL, LA ^{[1
]}

SIGMON, TW ^{[1
]}

GIBBONS, JF ^{[1
]}

MAGEE, TJ ^{[1
]}

ORMOND, R ^{[1
]}

机构：

[1] ADV RES & APPLICAT CORP,SUNNYVALE,CA 94086

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 08期

关键词：

D O I：

10.1063/1.92816

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：598 / 600

页数：3

共 6 条

[1] AN APPLICATION OF THE BOLTZMANN TRANSPORT-EQUATION TO ION RANGE AND DAMAGE DISTRIBUTIONS IN MULTILAYERED TARGETS [J].

CHRISTEL, LA ;

GIBBONS, JF ;

MYLROIE, S .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) :6176-6182

[2] SILVER RECOIL YIELD RESULTING FROM KRYPTON IMPLANTATION [J].

CHRISTEL, LA ;

GIBBONS, JF .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) :4600-4603

[3] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J].

CSEPREGI, L ;

KENNEDY, EF ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3906-3911

[4] REORDERING OF IMPLANTED AMORPHOUS LAYERS IN GAAS [J].

GAMO, K ;

INADA, T ;

MAYER, JW ;

EISEN, FH ;

RHODES, CG .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 33 (02) :85-89

[5] EPITAXIAL REGROWTH OF THIN AMORPHOUS GAAS-LAYERS [J].

GRIMALDI, MG ;

PAINE, BM ;

MAENPAA, M ;

NICOLET, MA ;

SADANA, DK .

APPLIED PHYSICS LETTERS, 1981, 39 (01) :70-72

[6] LOW-TEMPERATURE EPITAXIAL REGROWTH OF ION-IMPLANTED AMORPHOUS GAAS [J].

WILLIAMS, JS ;

AUSTIN, MW .

APPLIED PHYSICS LETTERS, 1980, 36 (12) :994-996

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