RESONANT-TUNNELING THROUGH A SINGLE IMPURITY IN HIGH MAGNETIC-FIELDS - PROBING A 2-DIMENSIONAL ELECTRON-GAS ON A NANOMETER-SCALE

被引：14

作者：

MCDONNELL, PJ ^{[1
]}

GEIM, AK ^{[1
]}

MAIN, PC ^{[1
]}

FOSTER, TJ ^{[1
]}

BETON, PH ^{[1
]}

EAVES, L ^{[1
]}

机构：

[1] UNIV NOTTINGHAM,DEPT PHYS,NOTTINGHAM NG7 2RD,ENGLAND

来源：

PHYSICA B | 1995年 / 211卷 / 1-4期

关键词：

D O I：

10.1016/0921-4526(94)01086-G

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Tunnelling through highly localised impurity states in the quantum well of a resonant tunnelling diode allows us to study the properties of the two-dimensional electron gas formed at the emitter barrier of the device. In high magnetic fields, the electrons form quantum dots in the disordered potential due to the unscreened donors in the depleted collector contact.

引用

页码：433 / 436

页数：4

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