SI-DEFECT CONCENTRATIONS IN HEAVILY SI-DOPED GAAS - ANNEALING-INDUCED CHANGES-II

被引：26

作者：

CHEN, RT

SPITZER, WG

机构：

[1] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007

[2] UNIV SO CALIF,DEPT PHYS,LOS ANGELES,CA 90007

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1981年 / 10卷 / 06期

关键词：

D O I：

10.1007/BF02661193

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1085 / 1129

页数：45

共 64 条

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