INTERFACES IN XD PROCESSED TIB2/NIAL COMPOSITES

被引：62

作者：

WANG, L

ARSENAULT, RJ

机构：

[1] Metallurgical Materials Laboratory, Department of Materials and Nuclear Engineering, University of Maryland, College Park, 20742-2115, MD

来源：

METALLURGICAL TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE | 1991年 / 22卷 / 12期

关键词：

D O I：

10.1007/BF02650261

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Interfaces of TiB2-NiAl and alpha-Al2O3-NiAl in TiB2/NiAl composites have been investigated by analytical electron microscopy. Although no consistent crystallographic orientation relationships have been found between NiAl and TiB2 or Al2O3, semicoherent interfaces between alpha-Al2O3 and NiAl have been observed by high-resolution electron microscopy (HREM) in areas where the low indexed crystallographic planes of alpha-Al2O3 aligned with that of NiAl. No semicoherent interfaces between NiAl and TiB2 have been observed. Silicon segregation was consistently detected by X-ray energy-dispersive spectroscopy (EDS) at the TiB2/NiAl interface region. Segregation has not been detected in the alpha-Al2O3-NiAl interface region. The segregation layer observed at the TiB2-NiAl interface is too thin to absorb any of the thermal residual stress.

引用

页码：3013 / 3018

页数：6

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