OPTICAL AND ELECTRICAL-PROPERTIES OF INP INGAAS GROWN SELECTIVELY ON SIO2-MASKED INP

被引：19

作者：

WANG, YL

FEYGENSON, A

HAMM, RA

RITTER, D

WEINER, JS

TEMKIN, H

PANISH, MB

机构：

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 04期

关键词：

D O I：

10.1063/1.105457

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Heterostructures of InGaAs/InP have been grown selectively through windows in SiO2-masked InP substrates using metalorganic molecular beam epitaxy. The structures show high cathodoluminescence efficiency for window sizes down to 5-mu-m. A significant red shift, consistent with compressive lattice strain, and reduced intensity are observed for smaller features. Anomalous growth is observed near the edges of the windows. Selectively grown InGaAs/InP p-n junctions and bipolar transistors exhibit excellent electrical characteristics after removal of 1-2-mu-m of edge material.

引用

页码：443 / 445

页数：3

共 8 条

[1] SELECTIVE AREA GROWTH OF INP INGAAS MULTIPLE QUANTUM WELL LASER STRUCTURES BY METALORGANIC MOLECULAR-BEAM EPITAXY [J].