CATHODOLUMINESCENCE OBSERVATIONS OF AL-RICH GA1-XALX AS WITH HIGH SI CONTENT

[1] BINDEMANN R, TO BE PUBLISHED

[2] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +

[3] OPTICAL ABSORPTION AND RECOMBINATION RADIATION IN SEMICONDUCTORS DUE TO TRANSITIONS BETWEEN HYDROGEN-LIKE ACCEPTOR IMPURITY LEVELS AND THE CONDUCTION BAND [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (1-2) : 76 - 83

[4] Hansel Th., 1973, Experimentelle Technik der Physik, V21, P77

[5] Horig W., 1970, Physica Status Solidi, V42, pK193, DOI 10.1002/pssb.19700420270

[6] LUMINESCENCE IN INDIRECT BANDGAP ALXGA1-XAS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (11) : 4692 - &

[7] PHOTO AND CATHODOLUMINESCENCE IN VAPOR-GROWN A1AS [J]. SOLID STATE COMMUNICATIONS, 1970, 8 (17) : 1407 - +

[8] OPTICAL ABSORPTION DUE TO EXCITATION OF ELECTRONS BOUND TO SI AND S IN GAP [J]. PHYSICAL REVIEW, 1969, 186 (03): : 786 - &

[9] ENERGY-BAND STRUCTURE OF ALUMINUM ARSENIDE [J]. PHYSICAL REVIEW, 1969, 188 (03): : 1193 - &

[10] BOUND EXCITONS IN GAP [J]. PHYSICAL REVIEW, 1963, 131 (06): : 2397 - &

[1] BINDEMANN R, TO BE PUBLISHED

[2] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +

[3] OPTICAL ABSORPTION AND RECOMBINATION RADIATION IN SEMICONDUCTORS DUE TO TRANSITIONS BETWEEN HYDROGEN-LIKE ACCEPTOR IMPURITY LEVELS AND THE CONDUCTION BAND [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (1-2) : 76 - 83

[4] Hansel Th., 1973, Experimentelle Technik der Physik, V21, P77

[5] Horig W., 1970, Physica Status Solidi, V42, pK193, DOI 10.1002/pssb.19700420270

[6] LUMINESCENCE IN INDIRECT BANDGAP ALXGA1-XAS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (11) : 4692 - &

[7] PHOTO AND CATHODOLUMINESCENCE IN VAPOR-GROWN A1AS [J]. SOLID STATE COMMUNICATIONS, 1970, 8 (17) : 1407 - +

[8] OPTICAL ABSORPTION DUE TO EXCITATION OF ELECTRONS BOUND TO SI AND S IN GAP [J]. PHYSICAL REVIEW, 1969, 186 (03): : 786 - &

[9] ENERGY-BAND STRUCTURE OF ALUMINUM ARSENIDE [J]. PHYSICAL REVIEW, 1969, 188 (03): : 1193 - &

[10] BOUND EXCITONS IN GAP [J]. PHYSICAL REVIEW, 1963, 131 (06): : 2397 - &