PHOTO AND CATHODOLUMINESCENCE IN VAPOR-GROWN A1AS

[1] DEAN PJ, 1968, T METALL SOC AIME, V242, P384

[2] ETTENBERG M, 1970, MAY NAT M EL SOC LOS

[3] LIGHT EMISSION FROM FORWARD BIASED P-N JUNCTIONS IN GALLIUM PHOSPHIDE [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 313 - &

[4] KRESSEL H, IN PRESS

[5] LORENZ MR, IN PRESS

[6] NICOLL FH, IN PRESS

[7] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED EPITAXIAL GAAS1-XPX USING ARSINE AND PHOSPHINE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) : 724 - &

[8] ELECTRICAL PROPERTIES OF N-TYPE ALUMINIUM ARSENIDE [J]. SOLID-STATE ELECTRONICS, 1965, 8 (08) : 649 - &

[9] YIM WM, UNPUBLISHED RESULTS

[1] DEAN PJ, 1968, T METALL SOC AIME, V242, P384

[2] ETTENBERG M, 1970, MAY NAT M EL SOC LOS

[3] LIGHT EMISSION FROM FORWARD BIASED P-N JUNCTIONS IN GALLIUM PHOSPHIDE [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 313 - &

[4] KRESSEL H, IN PRESS

[5] LORENZ MR, IN PRESS

[6] NICOLL FH, IN PRESS

[7] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED EPITAXIAL GAAS1-XPX USING ARSINE AND PHOSPHINE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) : 724 - &

[8] ELECTRICAL PROPERTIES OF N-TYPE ALUMINIUM ARSENIDE [J]. SOLID-STATE ELECTRONICS, 1965, 8 (08) : 649 - &

[9] YIM WM, UNPUBLISHED RESULTS