STRUCTURE OF THE BORON-HYDROGEN COMPLEX IN CRYSTALLINE SILICON

被引：70

作者：

MARWICK, AD ^{[1
]}

OEHRLEIN, GS ^{[1
]}

JOHNSON, NM ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.36.4539

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4539 / 4542

页数：4

共 19 条

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[3] BONDING OR ANTIBONDING POSITION OF HYDROGEN IN SILICON
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[4] DeLeo G. G., 1985, Thirteenth International Conference on Defects in Semiconductors, P745
[5] HYDROGEN-ACCEPTOR PAIRS IN SILICON - PAIRING EFFECT ON THE HYDROGEN VIBRATIONAL FREQUENCY
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[6] LATTICE LOCATION OF BORON IONS IMPLANTED INTO SILICON
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[7] HOWE LM, 1983, METHODS EXPT PHYSICS, V21, P275
[8] JOHNSON NM, 1987, PHYS REV B, V35, P4166, DOI 10.1103/PhysRevB.35.4166
[9] MECHANISM FOR HYDROGEN COMPENSATION OF SHALLOW-ACCEPTOR IMPURITIES IN SINGLE-CRYSTAL SILICON
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[10] LINDHARD J, 1965, K DAN VIDENSK SELSK, V34