THE DEPENDENCE OF THE MAXIMUM OPERATING TEMPERATURE OF LONG-WAVELENGTH SEMICONDUCTOR-LASERS ON PHYSICAL AND MATERIAL DEVICE PARAMETERS

An new expression relating the theoretical maximum operating temperature, T-max of an InGaAsP-TnP-based laser to adjustable device structural and material parameters, such as the cavity length, L, facet reflectivity R, transparency current density, Jth, and the modal gain coefficient beta, is presented. The validity of this relationship is demonstrated through an examination of empirical results on two sets of unstrained multiple quantum-well (MQW) laser structures with different QW widths.