ANALYSIS OF THE HIGH-TEMPERATURE CHARACTERISTICS OF INGAAS ALGAAS STRAINED QUANTUM-WELL LASERS

The effect of high temperature on the threshold gain and threshold current density of an Ino.0.15Ga0.85As strained quantum-well laser is examined both theoretically and experimentally. It is found that the nonlinearity of the gain versus current relationship increases with temperature. The implications of this result on laser cavity design for optimal high temperature performance are discussed. The eff ect of high temperature on modulation bandwidth is also considered. While the numerical results are specific to an In0.15Ga0.85As strained quantum-well laser, qualitatively they apply to all quantum-well lasers.