LOCALIZED VERSUS ITINERANT ELECTRONS AT THE METAL-INSULATOR-TRANSITION IN SI-P

被引：72

作者：

LAKNER, M

VONLOHNEYSEN, H

机构：

来源：

PHYSICAL REVIEW LETTERS | 1989年 / 63卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.63.648

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

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页码：648 / 651

页数：4

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