ELECTRICAL-PROPERTIES OF SILICON LEAD BORO-ALUMINO-SILICATE GLASS INTERFACES - INSULATOR CHARGE AND DISTRIBUTION OF INTERFACE STATES STUDIED BY PHOTOVOLTAGE MEASUREMENTS

被引：9

作者：

HEILIG, K ^{[1
]}

KOLBIG, E ^{[1
]}

REINEKE, J ^{[1
]}

机构：

[1] VEB MIKROELEKTRON KARL LIEBKNECHT,DDR-1533 STAHNSDORF,GER DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1989年 / 114卷 / 02期

关键词：

D O I：

10.1002/pssa.2211140220

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：579 / 586

页数：8

共 31 条

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[9] E(K) RELATION FOR A 2-BAND SCHEME OF SEMICONDUCTORS AND APPLICATION TO METAL-SEMICONDUCTOR CONTACT [J].

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