STRUCTURAL FEATURES AT THE SI-SIO2 INTERFACE

[1] O-17 HYPERFINE-STRUCTURE OF NEUTRAL (S=1) VACANCY-OXYGEN CENTER IN ION-IMPLANTED SILICON [J]. PHYSICAL REVIEW B, 1972, 5 (11): : 4274 - &

[2] EPR TECHNIQUES FOR STUDYING DEFECTS IN SILICON [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1977, 48 (02) : 135 - 141

[3] STRAIN BROADENING OF THE DANGLING-BOND RESONANCE AT THE (111)SI-SIO2 INTERFACE [J]. PHYSICAL REVIEW B, 1986, 33 (07): : 4471 - 4478

[4] DIPOLAR INTERACTIONS BETWEEN DANGLING BONDS AT THE (111) SI-SIO2 INTERFACE [J]. PHYSICAL REVIEW B, 1986, 34 (06): : 3610 - 3619

[5] SI-29 HYPERFINE-STRUCTURE OF UNPAIRED SPINS AT THE SI/SIO2 INTERFACE [J]. APPLIED PHYSICS LETTERS, 1983, 43 (12) : 1111 - 1113

[6] ESR CENTERS, INTERFACE STATES, AND OXIDE FIXED CHARGE IN THERMALLY OXIDIZED SILICON WAFERS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 5847 - 5854

[7] KRIVANEK OL, 1978, PHYSICS SIO2 ITS INT, P356

[8] MAZUR JH, 1984, P SOC PHOTO-OPT INST, V463, P88, DOI 10.1117/12.941353

[9] STUDY OF SILICON-SILICON DIOXIDE STRUCTURE BY ELECTRON SPIN RESONANCE .1. [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (01) : 52 - +

[10] INTERFACE STATES AND ELECTRON-SPIN RESONANCE CENTERS IN THERMALLY OXIDIZED (111) AND (100) SILICON-WAFERS [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) : 879 - 884

[1] O-17 HYPERFINE-STRUCTURE OF NEUTRAL (S=1) VACANCY-OXYGEN CENTER IN ION-IMPLANTED SILICON [J]. PHYSICAL REVIEW B, 1972, 5 (11): : 4274 - &

[2] EPR TECHNIQUES FOR STUDYING DEFECTS IN SILICON [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1977, 48 (02) : 135 - 141

[3] STRAIN BROADENING OF THE DANGLING-BOND RESONANCE AT THE (111)SI-SIO2 INTERFACE [J]. PHYSICAL REVIEW B, 1986, 33 (07): : 4471 - 4478

[4] DIPOLAR INTERACTIONS BETWEEN DANGLING BONDS AT THE (111) SI-SIO2 INTERFACE [J]. PHYSICAL REVIEW B, 1986, 34 (06): : 3610 - 3619

[5] SI-29 HYPERFINE-STRUCTURE OF UNPAIRED SPINS AT THE SI/SIO2 INTERFACE [J]. APPLIED PHYSICS LETTERS, 1983, 43 (12) : 1111 - 1113

[6] ESR CENTERS, INTERFACE STATES, AND OXIDE FIXED CHARGE IN THERMALLY OXIDIZED SILICON WAFERS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 5847 - 5854

[7] KRIVANEK OL, 1978, PHYSICS SIO2 ITS INT, P356

[8] MAZUR JH, 1984, P SOC PHOTO-OPT INST, V463, P88, DOI 10.1117/12.941353

[9] STUDY OF SILICON-SILICON DIOXIDE STRUCTURE BY ELECTRON SPIN RESONANCE .1. [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (01) : 52 - +

[10] INTERFACE STATES AND ELECTRON-SPIN RESONANCE CENTERS IN THERMALLY OXIDIZED (111) AND (100) SILICON-WAFERS [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) : 879 - 884