STRUCTURAL FEATURES AT THE SI-SIO2 INTERFACE

被引：54

作者：

BROWER, KL

机构：

来源：

ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE NEUE FOLGE | 1987年 / 151卷

关键词：

D O I：

10.1524/zpch.1987.151.Part_1_2.177

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：177 / 189

页数：13

共 14 条

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[6] ESR CENTERS, INTERFACE STATES, AND OXIDE FIXED CHARGE IN THERMALLY OXIDIZED SILICON WAFERS [J].

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[7]

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[8]

MAZUR JH, 1984, P SOC PHOTO-OPT INST, V463, P88, DOI 10.1117/12.941353

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[10] INTERFACE STATES AND ELECTRON-SPIN RESONANCE CENTERS IN THERMALLY OXIDIZED (111) AND (100) SILICON-WAFERS [J].

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DEAL, BE ;

RAZOUK, RR .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) :879-884

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