EFFECT OF GOLD DOPING UPON CHARACTERISTICS OF MOS FIELD-EFFECT TRANSISTORS WITH APPLIED SUBSTRATE VOLTAGE

被引：16

作者：

RICHMAN, P

机构：

[1] Bayside Lab. Research Center, General Telephone & Electronics Labs. Inc., Bayside

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1968年 / 56卷 / 04期

关键词：

D O I：

10.1109/PROC.1968.6393

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

From an examination of the dependence of MOS transistor threshold voltage on substrate biasing conditions, experimental evidence is presented which indicates that at least part of the shift in threshold voltage which results from gold doping can be attributed to ionized gold acceptor states near the silicon surface. Copyright © 1968 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：774 / &

共 7 条

[1] DEPENDENCE OF MOS TRANSISTOR THRESHOLD VOLTAGE ON SUBSTRATE RESISTIVITY [J].

BROTHERTON, SD .

SOLID-STATE ELECTRONICS, 1967, 10 (06) :611-+

[2] PROPERTIES OF GOLD DOPED MOS STRUCTURES [J].

CAGNINA, SF ;

SNOW, EH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (11) :1165-+

[3]

CHOU N, 1967, FALL M EL SOC CHIC

[4] EFFECT OF DIFFUSED OXYGEN AND GOLD ON SURFACE PROPERTIES OF OXIDIZED SILICON [J].

NASSIBIA.AG .

SOLID-STATE ELECTRONICS, 1967, 10 (09) :879-&

[5] EFFECT OF GOLD ON SURFACE PROPERTIES AND LEAKAGE CURRENT OF MOS TRANSISTORS [J].

NASSIBIAN, AG .

SOLID-STATE ELECTRONICS, 1967, 10 (09) :891-+

[6]

RICHMAN P, 1967, CHARACTERISTICS OPER, P59

[7]

WALLMARK JT, 1966, FIELD EFFECT TRANSIS, P150

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