EFFECT OF DIFFUSED OXYGEN AND GOLD ON SURFACE PROPERTIES OF OXIDIZED SILICON

被引：25

作者：

NASSIBIA.AG

机构：

来源：

SOLID-STATE ELECTRONICS | 1967年 / 10卷 / 09期

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D O I：

10.1016/0038-1101(67)90001-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：879 / &

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共 20 条

[1] STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES
ATALLA, MM
TANNENBAUM, E
SCHEIBNER, EJ
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (03): : 749 - 783
[2] ATALLA MM, 1959, PROP ELEMENTAL COMPO
[3] BEMSKI G, 1958, J ELECTROCHEM SOC, V105, P583
[4] PRECIPITATION IN SILICON CRYSTALS CONTAINING ALUMINUM
BULLOUGH, R
NEWMAN, RC
WAKEFIELD, J
WILLIS, JB
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (04) : 707 - 714
[5] EFFECT OF HEAT TREATMENT UPON THE ELECTRICAL PROPERTIES OF SILICON CRYSTALS
FULLER, CS
LOGAN, RA
[J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) : 1427 - 1436
[6] METAL PRECIPITATES IN SILICON P-N JUNCTIONS
GOETZBERGER, A
SHOCKLEY, W
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (10) : 1821 - 1824
[7] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES
GROVE, AS
DEAL, BE
SNOW, EH
SAH, CT
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +
[8] THE SOLUBILITY OF OXYGEN IN SILICON
HROSTOWSKI, HJ
KAISER, RH
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 9 (3-4) : 214 - 216
[9] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON
IRVIN, JC
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +
[10] MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON
KAISER, W
FRISCH, HL
REISS, H
[J]. PHYSICAL REVIEW, 1958, 112 (05): : 1546 - 1554